Modeling of quantum effects in ultrasmall FD-SOI MOSFETs with effective potentials and three-dimensional Monte Carlo

被引：29

作者：

Ramey, SM

Ferry, DK

机构：

[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

来源：

PHYSICA B-CONDENSED MATTER | 2002年 / 314卷 / 1-4期

关键词：

effective potential; SOI MOSFET; Monte Carlo;

D O I：

10.1016/S0921-4526(01)01385-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this work, the effective potential is employed to account for the quantum mechanical effects of charge setback and elevated ground-state energy in the inversion layer of fully depleted (FD) SOI MOSFETs. We use the effective potential along with a three-dimensional Poisson solver and a Monte Carlo transport kernel to illustrate these quantum mechanical effects on the output characteristics of the transistor. It is demonstrated that the inclusion of such effects has a significant influence on the threshold voltage, carrier energy, and drive current of the device. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：350 / 353

页数：4