Exploring the 3D integration technology for CMOS image sensors

被引：0

作者：

Raymundo, Fernando ^{[1
]}

Martin-Gonthier, Phillipe ^{[1
]}

Molina, Romain ^{[1
]}

Rolando, Sebastien ^{[1
]}

Magnan, Pierre ^{[1
]}

机构：

[1] Univ Toulouse, CIMI Image Sensor Lab, ISAE, F-31055 Toulouse, France

来源：

2013 IEEE 11TH INTERNATIONAL WORKSHOP OF ELECTRONICS, CONTROL, MEASUREMENT, SIGNALS AND THEIR APPLICATION TO MECHATRONICS (ECMSM) | 2013年

关键词：

CMOS Image Sensor; Three dimensional integration technology; ADC; parallelism;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

3D fabrication technologies allow microelectronic circuits such as processors or memories to achieve very high integration densities. These technologies applied to CMOS image sensors, make possible the implementation of specific processing architectures without damaging key parameters of CMOS imagers. This paper illustrates these benefits with an implementation of a 3D image sensor integrating at the pixel level a low noise circuit coupled to an analog to digital converter.

引用

页数：5

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