Factors inducing deterioration of InBO3:Tb by electron bombardment

被引：3

作者：

Matsukiyo, H

Suzuki, T

Yamamoto, H

机构：

[1] Central Research Laboratory, Hitachi Limited, Kokubunji

[2] Electron Tube and Devices Division, C/O Central Research Laboratory, Hitachi Ltd., Kokubunji

[3] Electron Device Mfg. Equip. Eng. D., Hitachi, Ltd., Chiyoda-ku, Tokyo 101

[4] Tokyo Engineering University, Hachioji, Tokyo 192

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1996年 / 143卷 / 05期

关键词：

D O I：

10.1149/1.1836702

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Deterioration of an InBO3:Tb phosphor screen deposited in potassium silicate solution was studied by a demountable apparatus designed to simulate the tube condition. Evolution of oxygen from the phosphor crystal was observed under intense electron irradiation. It was found that the deterioration is accelerated by phosphor screen heating, which depends on the screen weight, packing density, and an amount of silica gel deposited between particles and the surface of the screen.

引用

页码：1696 / 1699

页数：4

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