Thermoelectric properties of the 0.05 wt.% SbI3-doped n-type Bi2(Te0.95Se0.05)3 alloy fabricated by the hot pressing method

被引:12
作者
Lee, SK
Oh, TS
Hyun, DB
Hwang, CW
机构
[1] Hongik Univ, Dept Met Engn & Mat Sci, Seoul 121791, South Korea
[2] Korea Inst Sci & Technol, Ctr Met Proc, Seoul 136791, South Korea
[3] Thermotek Ltd, Jinchun Gun 365820, Choongbook, South Korea
关键词
bismuth telluride; thermoelectric properties; Peltier cooling; figure-of-merit; hot pressing;
D O I
10.1007/BF03026347
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thermoelectric properties of the 0.05 wt.% SbI3-doped n-type Bi-2(Te0.95Se0.05)(3) alloy fabricated by hot pressing at temperatures ranging from 350 degrees C to 550 degrees C, were characterized. The electron concentration of the alloy decreased as the hot pressing temperature increased due to the annealing-out of the excess Te vacancies. When hot pressed at 350 degrees C, a figure-of-merit of 0.75x10(-3)/K was obtained due to the low Seebeck coefficient of -145 mu V/K and relatively high electrical resistivity of 2.05 m Ohm-cm. Upon increasing the hot pressing temperature, however, the figure-of-merit was improved mainly due to the increase of the Seebeck coefficient. A maximum figure-of-merit of 2.1x10(-3)/K was obtained by hot pressing at 550 degrees C.
引用
收藏
页码:67 / 71
页数:5
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