Thermoelectric properties of the 0.05 wt.% SbI3-doped n-type Bi2(Te0.95Se0.05)3 alloy fabricated by the hot pressing method

Thermoelectric properties of the 0.05 wt.% SbI3-doped n-type Bi-2(Te0.95Se0.05)(3) alloy fabricated by hot pressing at temperatures ranging from 350 degrees C to 550 degrees C, were characterized. The electron concentration of the alloy decreased as the hot pressing temperature increased due to the annealing-out of the excess Te vacancies. When hot pressed at 350 degrees C, a figure-of-merit of 0.75x10(-3)/K was obtained due to the low Seebeck coefficient of -145 mu V/K and relatively high electrical resistivity of 2.05 m Ohm-cm. Upon increasing the hot pressing temperature, however, the figure-of-merit was improved mainly due to the increase of the Seebeck coefficient. A maximum figure-of-merit of 2.1x10(-3)/K was obtained by hot pressing at 550 degrees C.