Confinement of acoustical vibrations in a semiconductor planar phonon cavity

被引:225
作者
Trigo, M [1 ]
Bruchhausen, A
Fainstein, A
Jusserand, B
Thierry-Mieg, V
机构
[1] Ctr Atom Bariloche, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina
[2] CNEA, Inst Balseiro, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina
[3] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France
关键词
D O I
10.1103/PhysRevLett.89.227402
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Extending the idea of optical microcavities to sound waves, we propose a phonon cavity consisting of two semiconductor superlattices enclosing a spacer layer. We show that acoustical phonons can be confined in such layered structures when the spacer thickness is an integer multiple of the acoustic half-wavelength at the center of one of the superlattice folded minigaps. We report Raman scattering experiments that, taking profit of an optical microcavity geometry, demonstrate unambiguously the observation of a phonon-cavity confined acoustical vibration in a GaAs/AlAs based structure. The experimental results compare precisely with photoelastic model calculations of the Raman spectra.
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页数:4
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