Er-doped SiO2 films by rf magnetron co-sputtering

被引：12
|
作者：
Cattaruzza, E. [1 ]
Battaglin, G. [1 ]
Visentin, F. [1 ]
Trave, E. [2 ]
机构：
[1] Univ Ca Foscari Venezia, Dept Phys Chem, I-30123 Venice, Italy
[2] Univ Padua, Dept Phys, I-35131 Padua, Italy
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2009年 / 355卷 / 18-21期
关键词：
Sputtering; Luminescence; Silica; SILICON; GLASSES;
D O I：
10.1016/j.jnoncrysol.2008.11.031
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The magnetron sputtering assisted by radiofrequency is a versatile technique to obtain glass films doped with rare earths. Er:SiO2 systems are optical materials able to amplify an optical signal at lambda = 1.54 mu m (the most used wavelength in fiber glass for optical telecommunications). Different energy treatments of these materials were performed, both during and after the sputtering deposition synthesis, with the aim at optimizing the radiative emission. The best-performing Er:SiO2 samples obtained are characterized by a photoluminescence yield comparable to that of the best Er:SiO2 systems obtained by other synthesis techniques. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：1128 / 1131
页数：4
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