Origin and suppression of V-shaped defects in the capping of self-assembled InAs quantum dots on graded Si1-xGex/Si substrate

被引：6

作者：

Tanoto, H. ^{[1
]}

Yoon, S. F. ^{[1
,2
]}

Ng, T. K. ^{[1
]}

Ngo, C. Y. ^{[1
]}

Dohrman, C. ^{[3
]}

Fitzgerald, E. A. ^{[3
,4
]}

Tan, L. H. ^{[5
]}

Tung, C. H. ^{[5
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Singapore MIT Alliance, Singapore 637460, Singapore

[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[4] Singapore MIT Alliance, Cambridge, MA 02139 USA

[5] Inst Microelect, Singapore 117685, Singapore

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 05期

关键词：

gallium arsenide; III-V semiconductors; indium compounds; photoluminescence; quenching (thermal); self-assembly; semiconductor growth; semiconductor quantum dots; V-centres; STRAINED INXGA1-XAS; GROWTH; GAAS; LASER; WELL;

D O I：

10.1063/1.3189086

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-assembled InAs quantum dots (QDs) on graded Si1-xGex/Si substrate were observed to adopt a truncated pyramidal shape when capped with GaAs. Our results suggest that atomic migration from the QD apex to the GaAs cap layer contributes to the formation of the symmetrical V-shaped defects near the top edges of the truncated pyramidal QDs. By employing an In0.1Ga0.9As cap, material migration and strain around the QDs were reduced, hence suppressing the occurrence of the V-shaped defects. Furthermore, photoluminescence thermal quenching rate of the QDs is significantly slower compared to the QDs with GaAs cap. Finally, 1.3 mu m room-temperature photoluminescence was observed.

引用

页数：3

共 8 条

[1] Electroluminescence and structural characteristics of InAs/In0.1Ga0.9As quantum dots grown on graded Si1-xGex/Si substrate
Tanoto, H.
Yoon, S. F.
Lew, K. L.
Loke, W. K.
Dohrman, C.
Fitzgerald, E. A.
Tang, L. J.
APPLIED PHYSICS LETTERS, 2009, 95 (14)
[2] Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si1-xGex/Si substrate
Liang, Y. Y.
Yoon, S. F.
Ngo, C. Y.
Tanoto, H.
Chen, K. P.
Loke, W. K.
Fitzgerald, E. A.
JOURNAL OF CRYSTAL GROWTH, 2011, 323 (01) : 426 - 430
[3] Growth and Characterization of Self-Assembled InAs Quantum Dots on Si (100) for Monolithic Integration by MBE
Jana, Sanjay Kumar
Mukhopadhyay, Partha
Kabi, Sanjib
Halder, Nripendra N.
Bag, Ankush
Ghosh, Saptarsi
Biswas, D.
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2014, 13 (05) : 917 - 925
[4] Controlling the size of InAs quantum dots on Si1-xGex/Si(001) by metalorganic vapor-phase epitaxy
Kawaguchi, Kenichi
Ebe, Hiroji
Ekawa, Mitsuru
Sugama, Akio
Arakawa, Yasuhiko
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2009, 165 (1-2): : 103 - 106
[5] Effect of Si Doping in Self-Assembled InAs Quantum Dots on Infrared Photodetector Properties
Seo, Dong-Bum
Hwang, Je-hwan
Oh, Boram
Kim, Jun Oh
Lee, Sang Jun
Kim, Eui-Tae
KOREAN JOURNAL OF MATERIALS RESEARCH, 2019, 29 (09): : 542 - 546
[6] Origin of ferromagnetism in self-assembled Ga1-xMnxAs quantum dots grown on Si
Wang, S. L.
Chen, L.
Meng, K. K.
Xu, P. F.
Meng, H. J.
Lu, J.
Yan, W. S.
Zhao, J. H.
APPLIED PHYSICS LETTERS, 2010, 97 (24)
[7] Structural and photoluminescence study of TiO2 layer with self-assembled Si1-xGex nanoislands
Sultan, Muhammad Taha
Gudmundsson, Jon Tomas
Manolescu, Andrei
Svavarsson, Halldor Gudfinnur
JOURNAL OF APPLIED PHYSICS, 2020, 128 (08)
[8] Organization of self-assembled quantum dots in SiGe/Si multilayers: effect of strain and substrate curvature
Sutter, E
Sutter, P
Vescan, L
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 89 (1-3): : 196 - 200

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