STT-MRAM Sensing: A Review

被引：73

作者：

Na, Taehui ^{[1
]}

Kang, Seung H. ^{[2
]}

Jung, Seong-Ook ^{[3
]}

机构：

[1] Incheon Natl Univ, Dept Elect Engn, Incheon 22012, South Korea

[2] Qualcomm Technol Inc, Corp Res & Dev, San Diego, CA 92121 USA

[3] Yonsei Univ, Sch Elect & Elect Engn, Seoul 03722, South Korea

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2021年 / 68卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

Magnetic tunneling; Sensors; Random access memory; Resistance; Arrays; Phase change random access memory; Junctions; Magnetic tunnel junction; offset tolerance; read disturbance; read yield; reference scheme; sensing circuit; sense amplifier; spin-transfer-torque MRAM; yield estimation; RANDOM-ACCESS; NONVOLATILE MEMORY; VARIATION-TOLERANT; CIRCUIT; SCHEME; WRITE; CELL; AMPLIFIER; ENDURANCE; SPRAM;

D O I：

10.1109/TCSII.2020.3040425

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This brief presents a review of developments in spin-transfer-torque magnetoresistive random access memory (STT-MRAM) sensing over the past 20 years from a circuit design perspective. Various sensing schemes are categorized and described according to the data-cell variation-tolerant characteristics, pre-amplifiers, and offset tolerance. Key breakthroughs for achieving the optimal reference scheme, read disturbance prevention, read energy reduction, accurate yield estimation, and overcoming other non-idealities are discussed. This review is intended to facilitate further enhancement of STT-MRAM sensing in advanced technology nodes, thereby fulfilling STT-MRAM's potential as a universal memory.

引用

页码：12 / 18

页数：7

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