Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices

Aluminum-oxide (Al2O3) thin films were deposited using trimethylaluminum (TMA) as the Al source and an O-2 plasma as the oxidant. The films were deposited by using electron cyclotron resonance plasma-enhanced atomic layer deposition (ECR-PEALD) at room temperature. This room-temperature deposition method is well suited for thermally fragile organic substrate devices. The growth rate was 2.2 angstrom/cycle, and a density of 3.2 g/cm(3) of Al2O3 was deposited at room temperature and a plasma power of 300 W. These low-temperature-deposited, thin, dense passsivation layers meet requirements for implementation of organic substrates in flexible electronic or polymer random access memory (PoRAM) applications.