The effect of hydrogen as an additive in reactive ion etching of GaAs for obtaining polished surface

被引：5

作者：

Dultsev, F. N. ^{[1
]}

Nenasheva, L. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, SB RAS, Novosibirsk 630090, Russia

来源：

APPLIED SURFACE SCIENCE | 2006年 / 253卷 / 03期

关键词：

reactive ion etching; gallium arsenide; hydrogen; surface roughness;

D O I：

10.1016/j.apsusc.2006.01.073

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effect of hydrogen on the reactive ion etching (RIE) of GaAs in the CF2Cl2 plasma is discussed. The addition of hydrogen into the reaction mixture improves the sharpness of etch borders; the etched surface is smooth for etching depth > 1 mu m, etching rate is time-constant. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：1287 / 1290

页数：4

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