Efficiency Enhancement with the Ferroelectric Coupling Effect Using P(VDF-TrFE) in CH3NH3PbI3 Solar Cells

被引:45
作者
Jia, Endong [1 ,2 ,3 ]
Wei, Dong [3 ]
Cui, Peng [3 ]
Ji, Jun [3 ]
Huang, Hao [3 ]
Jiang, Haoran [3 ]
Dou, Shangyi [3 ]
Li, Meicheng [3 ]
Zhou, Chunlan [1 ,2 ]
Wang, Wenjing [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Elect Engn, Key Lab Solar Thermal Energy & Photovolta Syst, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] North China Elect Power Univ, Sch Renewable Energy, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China
基金
中国国家自然科学基金;
关键词
ferroelectric coupling effect; perovskite solar cells; semi-transparent; EXCITON BINDING-ENERGY; POWER CONVERSION EFFICIENCY; CHARGE SEPARATION; PEROVSKITE FILMS; EFFECTIVE MASSES; THIN-FILM; POLARIZATION; CRYSTALLIZATION; METHYLAMMONIUM; LAYERS;
D O I
10.1002/advs.201900252
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A novel ferroelectric coupling photovoltaic effect is reported to enhance the open-circuit voltage (V-OC) and the efficiency of CH3NH3PbI3 perovskite solar cells. A theoretical analysis demonstrates that this ferroelectric coupling effect can effectively promote charge extraction as well as suppress combination loss for an increased minority carrier lifetime. In this study, a ferroelectric polymer P(VDF-TrFE) is introduced to the absorber layer in solar cells with a proper cocrystalline process. Piezoresponse force microscopy (PFM) is used to confirm that the P(VDF-TrFE):CH3NH3PbI3 mixed thin films possess ferroelectricity, while the pure CH3NH3PbI3 films have no obvious PFM response. Additionally, with the applied external bias voltages on the ferroelectric films, the devices begin to show tunable photovoltaic performance, as expected for the polarization in the poling process. Furthermore, it is shown that through the ferroelectric coupled effect, the efficiency of the CH3NH3PbI3-based perovskite photovoltaic devices is enhanced by about 30%, from 13.4% to 17.3%. And the open-circuit voltages (V-OC) reach 1.17 from 1.08 V, which is reported to be among the highest V(OC)s for CH3NH3PbI3-based devices. It should be noted in particular that the thickness of the layer is less than 160 nm, which can be regarded as semi-transparent.
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页数:9
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