A unified model incorporating yield, burn-in, and reliability

被引:11
作者
Kim, KO [1 ]
Kuo, W
机构
[1] Univ Alberta, Dept Math & Stat Sci, Edmonton, AB T6G 2G1, Canada
[2] Univ Tennessee, Knoxville, TN 37996 USA
关键词
yield models; extrinsic reliability; yield defects; reliability defects;
D O I
10.1002/nav.20023
中图分类号
C93 [管理学]; O22 [运筹学];
学科分类号
070105 ; 12 ; 1201 ; 1202 ; 120202 ;
摘要
The correlated improvement in yield and reliability has been observed in the case studies on integrated circuits and electronic assemblies. This paper presents a model that incorporates yield and reliability with the addition of a burn-in step to explain their correlated improvement. The proposed model includes as special cases several yield and reliability models that have been previously published and thus provides a unifying framework. The model is used to derive a condition for which yield functions can be multiplied to obtain the overall yield. Yield and reliability are compared as a function of operation time, and an analytical condition for burn-in to be effective is also obtained. Finally, Poisson and negative binomial defects models are further considered to investigate how reliability is based on yield. (C) 2004 Wiley Periodicals, Inc.
引用
收藏
页码:704 / 719
页数:16
相关论文
共 19 条
[1]  
Barlow RE, 1975, STAT THEORY RELIABIL
[2]   BURN-IN AND MIXED POPULATIONS [J].
BLOCK, HW ;
MI, J ;
SAVITS, TH .
JOURNAL OF APPLIED PROBABILITY, 1993, 30 (03) :692-702
[3]  
Casella G., 2021, STAT INFERENCE
[4]   THE USE AND EVALUATION OF YIELD MODELS IN INTEGRATED-CIRCUIT MANUFACTURING [J].
CUNNINGHAM, JA .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1990, 3 (02) :60-71
[5]  
*DEP DEF, 1993, MILHDBK344 MIL HDB E
[6]  
FERRISPRABHU AV, 1992, INTRO SEMICONDUCTOR
[7]  
HUSTON HH, 1992, INT REL PHY, P268, DOI 10.1109/RELPHY.1992.187656
[8]  
JENSEN F, 1991, RELIABILITY 91, P739
[9]   A relation model of gate oxide yield and reliability [J].
Kim, KO ;
Kuo, W ;
Luo, W .
MICROELECTRONICS RELIABILITY, 2004, 44 (03) :425-434
[10]   Modeling manufacturing yield and reliability [J].
Kim, T ;
Kuo, W .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1999, 12 (04) :485-492