Bi2O2Se for broadband terahertz wave switching

被引：9
作者：
Li, Zhe Wen [1 ,2 ]
Li, Jiu-Sheng [1 ,2 ]
机构：
[1] China Jiliang Univ, Ctr THz Res, Hangzhou 310018, Peoples R China
[2] China Jiliang Univ, Coll Informat Engn, Key Lab Electromagnet Wave Informat Technol & Met, Hangzhou 310018, Peoples R China
来源：
APPLIED OPTICS | 2020年 / 59卷 / 35期
基金：
中国国家自然科学基金;
关键词：
Selenium compounds - Bismuth compounds - Terahertz spectroscopy - Time domain analysis;
D O I：
10.1364/AO.412728
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Many modern terahertz systems require dynamic manipulation of a terahertz wave. We proposed a terahertz wave switch based on a Bi2O2Se/Si structure. The transmittance and conductivity characteristics of the Bi2O2Se in a terahertz region have been measured by terahertz time-domain spectroscopy and analyzed using the Drude model. An ON-OFF switching speed as fast as 2 MHz and an extinction ratio as high as 17.7 dB was achieved at an external laser irradiance of 1.3 W/cm(2). The switching characteristics of the device can be explained by the accumulation of carriers at the interface that induces terahertz wave intense absorption. Our approach can effectively be used to realize a wide range of dynamically tunable terahertz functional devices. This makes its use viable for a range of communication, imaging, and sensing applications. (C) 2020 Optical Society of America
引用
收藏
页码：11076 / 11079
页数：4
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