Activated chemisorption of oxygen on Si(111)-2x1

被引:10
作者
Goletti, C
Chiaradia, P
Moretti, L
Yian, W
Chiarotti, G
Selci, S
机构
[1] INST NAZL FIS MAT,I-00133 ROME,ITALY
[2] CNR,IST STRUTTURA MAT,I-00044 FRASCATI,ITALY
关键词
adsorption kinetics; atom-solid reactions; chemisorption; infrared absorption spectroscopy; physical adsorption; semiconducting surfaces; silicon; single crystal surfaces; solid-gas interfaces; sticking;
D O I
10.1016/0039-6028(96)00013-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Results on the chemisorption of molecular oxygen on Si(111)-2x1 at different temperatures are reported. They show that oxygen is initially physisorbed in a precursor state, From which it can be thermally activated into the chemisorbed slate. An activation energy of 20 meV is found. The dependence of the sticking coefficient upon coverage deviates from the classical Langmuir theory. A model of chemisorption fitting the experimental observations is presented. In the frame of this model, the heights of the barriers for chemisorption and desorption are obtained.
引用
收藏
页码:68 / 74
页数:7
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