Preparation of silicon oxide-carbon composite from benzene and trimethoxyphenylsilane by a liquid phase plasma method for supercapacitor applications

被引:11
作者
Lee, Heon [1 ]
Park, In-Soo [1 ]
Bang, Hye-Jin [1 ]
Park, Young-Kwon [2 ]
Cho, Eun-Bum [3 ]
Kim, Byung-Joo [4 ]
Jung, Sang-Chul [1 ]
机构
[1] Sunchon Natl Univ, Dept Environm Engn, 255 Jungang Ro, Sunchon 540950, Jeonnam, South Korea
[2] Univ Seoul, Sch Environm Engn, 163 Seoulsiripdaero, Seoul 130743, South Korea
[3] Seoul Natl Univ Sci & Technol, Dept Fine Chem, 232 Gongneung Ro, Seoul 01811, South Korea
[4] Korea Inst Carbon Convergence Technol, R&D Div, 110-11 Banryong Ro, Jeonju 54853, South Korea
基金
新加坡国家研究基金会;
关键词
Supercapacitors; Liquid phase plasma; Silicon oxide; Specific capacitance; Cyclic stability; NANOPARTICLES; CAPACITANCE; PERFORMANCE; GRAPHENE; BEHAVIOR; NANOSHEETS; ELECTRODE; BATTERY; DESIGN;
D O I
10.1016/j.apsusc.2019.03.153
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Silicon oxide-carbon composites (SiOCCs) were deposited directly in a reactant aqueous solution using a liquidphase plasma (LPP) method and applied as a supercapacitor electrode. The SiOCCs formed rapidly at the initial stages of the LPP reaction by the carbonization of benzene and TMPS, but the production of SiOCC decreased over the reaction time. The SiOCCs formed cluster chains by agglomeration, which were composed mostly of carbon with oxygen and silicon distributed uniformly. A higher TMPS content in the reactant solution resulted in the inclusion of more silicon and oxygen in SiOCCs. Most of the Si components synthesized by the LPP reaction form SiO2 bonds and some have carbon-bonded chemical structures. The SiOCCs particles were agglomerated in amorphous form with a size of approximately 10 to 40 nm and the d-spacing appeared to contain SiO2 particles of approximately 0.31 nm. As the content of silicon oxide in SiOCCs is increased, the specific surface area increased and the specific capacitance increased. In addition, the pseudocapacitance characteristics showed the lowest resistance. On the other hand, a higher silicon oxide content in SiOCCs resulted in higher capacitance loss due to volume expansion of silicon dioxide in the charge-discharge process.
引用
收藏
页码:625 / 631
页数:7
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