High-temperature epitaxy of PtSi/Si(001)

被引：43
作者：
Kavanagh, KL [1 ]
Reuter, MC [1 ]
Tromp, RM [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
JOURNAL OF CRYSTAL GROWTH | 1997年 / 173卷 / 3-4期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/S0022-0248(96)01047-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
High-temperature epitaxy of PtSi/Si(001) interfaces has been investigated by ultra-high-vacuum transmission electron microscopy for deposition temperatures up to 850 degrees C. At 600 degrees C continuous, polycrystalline, epitaxial films are observed with rectangular grains (10 x 30 nm), with the predominant, preferred orientation PtSi(110). By 750 degrees C the grains form islands which elongate in the PtSi[001] direction parallel the Si[110]. A strong shape anisotropy develops with length-to-width ratios of up to 100. Interface faceting is detected and observed in all islands by 810 degrees C and the preferred orientation changes to predominantly (120). The alignment of the PtSi(002) planes with the Si(220) planes is preserved at all temperatures and orientations.
引用
收藏
页码：393 / 401
页数：9
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