Modeling the Influence of Selected Factors on Thermal Resistance of Semiconductor Devices

被引：40

作者：

Gorecki, Krzysztof ^{[1
]}

Zarebski, Janusz ^{[1
]}

机构：

[1] Gdynia Maritime Univ, Dept Marine Elect, PL-81225 Gdynia, Poland

来源：

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY | 2014年 / 4卷 / 03期

关键词：

Self-heating; semiconductor devices; thermal models; thermal resistance; ELECTROTHERMAL SIMULATION; RELIABILITY-ANALYSIS; POWER MOSFETS; TRANSISTORS; MANAGEMENT; CIRCUITS; SPICE;

D O I：

10.1109/TCPMT.2013.2290743

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, the analytical description of the nonlinear thermal model of the semiconductor device considering the influence of the selected factors on its thermal resistance is proposed. The worked out nonlinear thermal model considers the influence of such factors as length of metal leads, solder area, dimensions of the heat-sink, ambient temperature, and dissipated power on the efficiency of heat transfer between the chip and the surrounding. The correctness of the worked out thermal model is verified experimentally for the selected types of semiconductor devices operating in different cooling conditions. In all the considered cases, the good agreement of the results of calculations and measurements is obtained.

引用

页码：421 / 428

页数：8

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