Light-emitting diodes based on Ga1-xInxAsySb1-y solid solutions grown from lead-containing melts

被引：0

作者：

Parkhomenko, YA ^{[1
]}

Astakhova, AP ^{[1
]}

Grebenshchikova, EA ^{[1
]}

Ivanov, ÉV ^{[1
]}

Kunitsyna, EV ^{[1
]}

Yakovlev, YP ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2004年 / 30卷 / 07期

关键词：

D O I：

10.1134/1.1783391

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Light-emitting diodes (LEDs) with the maximum emission at lambda = 2.3 and 2.44 mum are obtained and characterized. The active region of LEDs is based on Ga1 - xInxAsySb1 - y solid solutions (x = 0.21 and 0.25, respectively) grown by liquid phase epitaxy from lead-containing melts. The room-temperature external quantum yield of the 2.3 and 2.44 mum LEDs is 1.6 and 0.11%, respectively. (C) 2004 MAIK "Nauka/Interperiodica".

引用

页码：529 / 531

页数：3

共 6 条

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