Synthesis, growth and characterization of bismuth tellurite crystals

被引：8

作者：

Kumaragurubaran, S ^{[1
]}

Krishnamurthy, D ^{[1
]}

Subramanian, C ^{[1
]}

Ramasamy, P ^{[1
]}

机构：

[1] Anna Univ, Ctr Crystal Growth, Chennai 600025, Tamil Nadu, India

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 04期

关键词：

bismuth tellurite; czochralski growth; chemical etching; photorefractivity and microhardness;

D O I：

10.1016/S0022-0248(99)00541-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Results of the investigation on the synthesis and growth of high-quality bismuth tellurite crystals, suitable for optical investigations, are presented. The formation of thin opaque layer on the top portion of the crystal is avoided by employing suitable rotation rates. The classical chemical etching technique was employed to understand the perfection of the crystal along the growth axis. Laser damage threshold value on the (1 0 0) cleaved plate is calculated. The anisotropy of Vickers microhardness (H-v) values on the three principal directions is also reported. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：855 / 860

页数：6

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