Metastable states and their resonant electron-phonon interaction of shallow donors in GaAs and InP

被引：0

作者：

Shen, SC ^{[1
]}

Chen, ZH ^{[1
]}

机构：

[1] Chinese Acad Sci, NLIP, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China

来源：

PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS | 2001年 / 2卷

关键词：

metastable states; electron-phonon interaction; shallow donor;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report the Fourier transform infrared photoconductivity measurements and theoretical comparison of the magnetic field induced metastable states of the shallow donors in GaAs and InP. The transitions from the ground bound state to the metastable states of Si donors are observed and identified. A simplified trial wave-function is applied to these metastable states and the theoretical calculations are in good agreement with our experimental data. The electron-phonon interaction of the metastable states, which results in the magneto-polaron effect and the bound phonon effect, are investigated.

引用

页码：89 / 92

页数：4

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