ELECTRICAL PROPERTIES OF Se93-X-Zn2-Te5-InX CHALCOGENIDE GLASSES

被引：0

作者：

Singh, A. K. ^{[1
]}

Mehta, N. ^{[1
]}

Singh, K. ^{[1
]}

机构：

[1] Banaras Hindu Univ, Dept Phys, Varanasi 221005, Uttar Pradesh, India

来源：

CHALCOGENIDE LETTERS | 2009年 / 6卷 / 01期

关键词：

Chalcogenide glass; Electrical conductivity; Average coordination number; THIN-FILMS; GESE2-SB2SE3-ZNSE GLASSES; CHALCOHALIDE GLASSES; SYSTEM; TRANSPORT; KINETICS; TERNARY; TE;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrical properties of Se93-XZn2Te5InX (X= 0, 2, 4, 6 and 10) chalcogenide glasses have been carried out at room temperature. I-V characteristic of the present glasses were recorded upto 200V. A drastic I-V characteristic change have been observed between 160 to 200V for 4, 6, 10 at % of indium glasses. The electrical conductivity, ln(I) vs V-1/2 characteristics and electrical conductivity vs average coordination number parameter of present glasses have been also determined, which extensively varied with indium concentration.

引用

页码：9 / 16

页数：8

共 43 条

[1] DC Electrical measurements on evaporated thin films of vanadium pentoxide [J].