Comparison of slicing-induced damage in hexagonal SiC by wire sawing with loose abrasive, wire sawing with fixed abrasive, and electric discharge machining

被引：17

作者：

Ishikawa, Yukari ^{[1
]}

Yao, Yong-Zhao ^{[1
]}

Sugawara, Yoshihiro ^{[1
]}

Sato, Koji ^{[1
]}

Okamoto, Yoshihiro ^{[2
]}

Hayashi, Noritaka ^{[2
]}

Dierre, Benjamin ^{[3
]}

Watanabe, Kentaro ^{[3
]}

Sekiguchi, Takashi ^{[3
]}

机构：

[1] Japan Fine Ceram Ctr, Nagoya, Aichi 4568587, Japan

[2] ACT Corp, Kyoto 6018442, Japan

[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 07期

关键词：

GROWN STACKING-FAULTS; SILICON-CARBIDE;

D O I：

10.7567/JJAP.53.071301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Crystal damage induced in hexagonal SiC by cutting was characterized by transmission electron microscopy and Raman scattering. Wiresawing with loose abrasive (WSLA) induces stacking faults (SFs), dispersive triangular crystal disordered areas, and dislocation half-loop bundles. Wiresawing with fixed abrasive (WSFA) induces SFs, crystal disordered layers, and dislocation half-loop bundles. Electric discharge machining (EDM) predominantly forms silicon, carbon, and 3C-SiC by 6H-SiC decomposition. The mechanisms inducing crystal damage by slicing were discussed on the basis of characterization results. (C) 2014 The Japan Society of Applied Physics

引用

页数：11

共 40 条

[21] Heterojunctions and superlattices based on silicon carbide [J].