Survey of Dopant-Free Carrier-Selective Contacts for Silicon Solar Cells

被引：0

作者：

Bullock, James ^{[1
,2
]}

Wan, Yimao ^{[2
]}

Hettick, Mark ^{[1
]}

Geissbuhler, Jonas ^{[3
]}

Ong, Alison J. ^{[1
]}

Kiriya, Daisuke ^{[1
]}

Yan, Di ^{[2
]}

Allen, Thomas ^{[2
]}

Peng, Jun ^{[2
]}

Zhang, Xinyu ^{[2
]}

Sutter-Fella, Carolin M. ^{[1
]}

De Wolf, Stefaan ^{[3
]}

Ballif, Christophe ^{[3
]}

Cuevas, Andres ^{[2
]}

Javey, Ali ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[2] Australian Natl Univ, Res Sch Engn, Canberra, ACT 0200, Australia

[3] EPFL, Photovolta & Thin Film Elect Lab PVLab, Maladiere 71b, CH-200 Neuchatel, Switzerland

来源：

2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2016年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In recent years a significant amount of effort has been devoted towards the development of dopant-free carrier selective contacts for crystalline silicon (c-Si) solar cells. This short manuscript surveys a range of materials which have the potential to induce carrier-selectivity when applied to c-Si, including metals, metal oxides, alkali / alkaline earth metal salts, and organic conductors. Simple Ohmic test structures are used to assess the selectivity of these materials, that is, hole contacts are tested on p-type c-Si and electron contacts on n-type c-Si. Among these alternatives, a number of systems with exceptional potential are identified.

引用

页码：210 / 213

页数：4

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