Soft breakdown and hot carrier reliability of CMOS RF mixer and redesign

被引：0
作者：
Quiang, L [1 ]
Wei, L [1 ]
Zhang, JL [1 ]
Yuan, JS [1 ]
机构：
[1] Univ Cent Florida, Sch Elect Engn & Comp Sci, Chip Design & Reliabil Lab, Orlando, FL 32816 USA
来源：
2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2002年
关键词：
D O I：
10.1109/MWSYM.2002.1011668
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, CMOS RF down-conversion mixer circuit hot-carrier (HC) and soft breakdown (SBD) reliability estimation and redesign is presented. First of all, MOS transistor reliability under analog operation was evaluated by experiment. The mixer circuit operation conditions for the occurrence of HC and SBD are analyzed, and circuit performance model are presented to relate the device degradation to circuit performance degradation. Finally, we propose mixer circuit redesign strategies, which reduce the HC and SBD problem. Simulation shows improved noise performance with the similar gain, IIP3 and power consumption.
引用
收藏
页码：509 / 512
页数：4
相关论文
共 50 条
  • [31] A 5 GHz CMOS RF mixer in 0.18 μm CMOS technology
    Chouchane, T
    Sawan, M
    CCECE 2003: CANADIAN CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING, VOLS 1-3, PROCEEDINGS: TOWARD A CARING AND HUMANE TECHNOLOGY, 2003, : 1905 - 1908
  • [32] Study of hot-carrier effects on power RF LDMOS device reliability
    Gares, M.
    Belaid, M. A.
    Maanane, H.
    Masmoudi, M.
    Marcon, J.
    Mourgues, K.
    Eudeline, Ph.
    MICROELECTRONICS RELIABILITY, 2007, 47 (9-11) : 1394 - 1399
  • [33] CMOS RF mixer design - A noise cancellation approach
    Pavaluta, CM
    Neacsu, C
    Derevlean, M
    Arsinte, G
    SCS 2003: INTERNATIONAL SYMPOSIUM ON SIGNALS, CIRCUITS AND SYSTEMS, VOLS 1 AND 2, PROCEEDINGS, 2003, : 245 - 248
  • [34] CMOS Mixer Design for Cable Modem RF Tuner
    Kherodia, Ashok
    Chandorkar, A. N.
    2009 IEEE 8TH INTERNATIONAL CONFERENCE ON ASIC, VOLS 1 AND 2, PROCEEDINGS, 2009, : 367 - 370
  • [35] Digital calibration of gain and linearity in a CMOS RF mixer
    Rodriguez, S.
    Rusu, A.
    Zheng, L. -R.
    Ismail, M.
    PROCEEDINGS OF 2008 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-10, 2008, : 1288 - 1291
  • [36] BALANCED MIXER ON HOT CARRIER EMF IN SEMICONDUCTORS
    PITANOV, VS
    LYUBIVY, VA
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA, 1983, 26 (12): : 61 - 62
  • [37] Multi-level metal CMOS manufacturing with deuterium for improved hot carrier reliability
    Kizilyalli, IC
    Weber, G
    Chen, Z
    Abeln, G
    Schofield, M
    Kotzias, B
    Register, F
    Harris, E
    Sen, S
    Chetlur, S
    Patel, M
    Stirling, L
    Huang, R
    Massengale, A
    Roy, PK
    Higashi, G
    Foley, E
    Lee, J
    Lyding, J
    Hess, K
    INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 935 - 938
  • [38] Impact of scaling on CMOS chip failure rate, and design rules for hot carrier reliability
    Haggag, A
    McMahon, W
    Hess, K
    Fischer, B
    Register, LF
    VLSI DESIGN, 2001, 13 (1-4) : 111 - 115
  • [39] Manufacturing multi-level metal CMOS with deuterium for improved hot carrier reliability
    Kizilyalli, IC
    Abeln, G
    Chen, Z
    Weber, G
    Register, F
    Harris, E
    Chetlur, S
    Higashi, G
    Schofieled, M
    Sen, S
    Kotzias, B
    Roy, PK
    Lyding, J
    Hess, K
    MICROELECTRONIC DEVICE TECHNOLOGY II, 1998, 3506 : 141 - 146
  • [40] Hot carrier reliability for 0.13μm CMOS technology with dual gate oxide thickness
    Lin, C
    Biesemans, S
    Han, LK
    Houlihan, K
    Schiml, T
    Schruefer, K
    Wann, C
    Chen, J
    Mahnkopf, R
    INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, : 135 - 138
12345