Soft breakdown and hot carrier reliability of CMOS RF mixer and redesign

被引：0
|
作者：
Quiang, L [1 ]
Wei, L [1 ]
Zhang, JL [1 ]
Yuan, JS [1 ]
机构：
[1] Univ Cent Florida, Sch Elect Engn & Comp Sci, Chip Design & Reliabil Lab, Orlando, FL 32816 USA
来源：
2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2002年
关键词：
D O I：
10.1109/MWSYM.2002.1011668
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, CMOS RF down-conversion mixer circuit hot-carrier (HC) and soft breakdown (SBD) reliability estimation and redesign is presented. First of all, MOS transistor reliability under analog operation was evaluated by experiment. The mixer circuit operation conditions for the occurrence of HC and SBD are analyzed, and circuit performance model are presented to relate the device degradation to circuit performance degradation. Finally, we propose mixer circuit redesign strategies, which reduce the HC and SBD problem. Simulation shows improved noise performance with the similar gain, IIP3 and power consumption.
引用
收藏
页码：509 / 512
页数：4
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