Degradation of the N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine by photon irradiation

被引：7

作者：

Chagas, Marcos R. M. ^{[1
]}

Quirino, W. G. ^{[2
]}

Neto, Antonio M. J. C. ^{[4
]}

de Sousa, Erlandsson A. ^{[3
]}

Cremona, M. ^{[2
]}

Rocco, Maria L. M. ^{[3
]}

Mota, Gunar V. S. ^{[1
]}

机构：

[1] Univ Fed Sergipe, Nucleo Ciencia & Engn Mat, CCET, BR-49100000 Sao Cristovao, SE, Brazil

[2] PUC Rio, Dept Fis, LOEM, BR-21453900 Rio De Janeiro, Brazil

[3] IQ UFRJ, Dept Fisicoquim, BR-21949900 Rio De Janeiro, Brazil

[4] UFPA, CCEN, Dept Fis, BR-66075110 Belem, Para, Brazil

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 15期

关键词：

Organic Light-Emitting Diodes; Photodegradation; Near Edge X-ray Absorption Fine Structure; Ultraviolet photoelectron spectroscopy; LIGHT-EMITTING DEVICES; PHOTOABSORPTION; PHOTOEMISSION; LAYER;

D O I：

10.1016/j.tsf.2009.01.083

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The increase of operational lifetime for Organic Light-Emitting Diodes has stimulated many studies focused on the mechanisms responsible for their degradation. Degradation studies of the N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine thin films have been performed using synchrotron radiation in order to elucidate the modification of the electronic structure in such organic compound, when non-monochromatized light was used to simulate the degradation caused by intense sunlight. Core level photoabsorption at the N 1s-edge and valence level photoemission measurements suggest stronger structural stability and a minor loss in the hole transporting properties. The degradation leads to the decrease of the injection and charge mobility, associated with the loss of nitrogen and benzene rings, which causes an increase of the impedance in the electroluminescent device. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.

引用

页码：4461 / 4463

页数：3