The effect of growth temperature on atomic ordering in Ga0.52In0.48P epilayers grown on GaAs(001) substrates by GS-MBE

A Transmission Electron Microscopy (TEM), Photoluminescence (PL) and Photoluminescence Excitation Spectroscopy (PLE) investigation has been conducted on Ga0.52In0.48P epilayers, grown on GaAs(001) by Gas-Source Molecular Beam Epitaxy. Selected area diffraction in the TEM shows that epilayers grown at temperatures between 480 degrees C and 535 degrees C exhibit CuPt-type ordering with the antiphase domain size increasing with increasing growth temperature. PLE data shows that, in the temperature range 480 degrees C to 535 degrees C the band gap energy of Ga0.52In0.48P epilayers increases with increasing growth temperature fi om 1.971 to 2.003 (+/-0.001 eV). For high band gap optical data storage applications these values compare well with the highest band gap energies reported for epilayers grown by MOCVD.