Energy loss rate of hot electrons due to confined acoustic phonon modes in a freestanding quantum well structure

被引：8

作者：

Bhat, J. S. ^{[1
]}

Nesargi, R. A. ^{[1
]}

Mulimani, B. G. ^{[1
]}

机构：

[1] Karnatak Univ, Dept Phys, Dharwad 580003, Karnataka, India

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 03期

关键词：

electron-phonon interactions; energy loss of particles; gallium arsenide; hot carriers; III-V semiconductors; indium compounds; phonons; semiconductor quantum wells; SCATTERING RATES; OPTICAL PHONONS; RELAXATION; GAAS; OSCILLATIONS; THERMOPOWER; PARAMETERS; POWER; GAS;

D O I：

10.1063/1.3183948

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The energy loss rate of hot electrons in a semiconducting freestanding quantum well structure, in the presence of zero and finite quantizing magnetic field, is studied using electron temperature model. Electron interaction with confined acoustic phonons via deformation potential coupling described by elastic continuum model is considered. Numerical results are given for GaN, InAs, and InSb with zinc-blende structure and GaAs freestanding quantum well structures for the dependence of energy loss rate on electron temperature and the magnetic field. The results are compared to those obtained for bulk description of acoustic phonon modes.

引用

页数：7