Study on Boron Doped Silicon Quantum Dots Superlattices for All-Silicon Tandem Solar Cells

被引：0

作者：

Hao, Xiaojing ^{[1
]}

Cho, Eunchel ^{[2
]}

Park, Sangwook ^{[1
]}

Shen, Yansong ^{[3
]}

Conibeeer, Gavin ^{[1
]}

Green, Martin Andrew ^{[1
]}

机构：

[1] Univ New S Wales, ARC Photovolta Ctr Excellence, Sydney, NSW 2052, Australia

[2] Hyundai Heavy Ind CO LTD, Technol Appl Res Lab, Ulsan, South Korea

[3] Univ New S Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia

来源：

COMMAD: 2008 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES | 2008年

基金：

澳大利亚研究理事会;

关键词：

Si quantum dots; boron doping; solar cells;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optimized chemical structure was proposed for boron-doped Si quantum dots superlattices. Boron-doped Si quantum doped superlattices were then synthesized by a co-sputtering technique, and characterized for their promising application in all-Si tandem solar cells. The formation of Si quantum dots was confirmed by transmission electron microscopy. The effect of boron dopant concentration on the Si crystallization was investigated. Lateral resistivity of Si quantum dots superlattices was studied. The results showed that boron addition does not affect the quantum dot size, but significantly reduces the resistivity of Si quantum dots superlattices.

引用

页码：297 / +

页数：2

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