Synthesis of Nickel Mono-Silicide Nanowire by Chemical Vapor Deposition on Nickel Film: Role of Surface Nickel Oxides

被引：7
作者：
Sun, Zhi-Qiang [1 ]
Whang, Su-Jin [1 ]
Yang, Wei-Feng [1 ]
Lee, Sung-Joo [1 ]
机构：
[1] Natl Univ Singapore, Silicon Nano Device Lab, Dept Elect & Comp Engn, Singapore 117576, Singapore
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 04期
关键词：
AMORPHOUS-SILICON; SINGLE-CRYSTALLINE; NI CATALYSTS; GROWTH; OXIDATION;
D O I：
10.1143/JJAP.48.04C138
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We synthesized nickel mono-silicide nanowires (NiSi-NWs) on electron-beam-evaporated Ni films with SiH4/H-2 gases in a chemical-vapor-deposition chamber, and studied the growth mechanism of NiSi-NW by investigating various synthesis conditions. Results show that NiO and Ni2O3 phases coexist on nickel surface and agglomerate after heating and the initial growth of NiSi-NW is triggered by the Ni2O3. The effects of these surface nickel-oxides on NiSi-NW growth were investigated, and a synthesis model based-on vapor-liquid-solid mechanism with the aid of nickel diffusion to initiate NiSi-NW synthesis is proposed. It is also found that the diameter of NiSi-NW is mainly controlled by the synthesis temperature and the activation energy of NiSi-NW formation is estimated to be 1.72 eV. (C) 2009 The Japan Society of Applied Physics
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页数：8
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