1.5-kV and 2.2-mΩ-cm2 Vertical GaN Transistors on Bulk-GaN Substrates

被引：293

作者：

Nie, Hui ^{[1
]}

Diduck, Quentin ^{[1
]}

Alvarez, Brian ^{[1
]}

Edwards, Andrew P. ^{[1
]}

Kayes, Brendan M. ^{[1
]}

Zhang, Ming ^{[1
]}

Ye, Gangfeng ^{[1
]}

Prunty, Thomas ^{[1
]}

Bour, Dave ^{[1
]}

Kizilyalli, Isik C. ^{[1
]}

机构：

[1] Avogy Inc, San Jose, CA 95134 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 09期

关键词：

Gallium nitride; vertical transistors; power semiconductor devices; BREAKDOWN VOLTAGE; BLOCKING VOLTAGE; ALGAN/GAN HEMTS;

D O I：

10.1109/LED.2014.2339197

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, vertical GaN transistors fabricated on bulk GaN substrates are discussed. A threshold voltage of 0.5 V and saturation current >2.3 A are demonstrated. The measured devices show breakdown voltages of 1.5 kV and specific ON-resistance of 2.2 m Omega-cm(2), which translates to a figure-of-merit of V-BR(2)/R-ON similar to 1 x 10(9) V-2 Omega(-1).cm(-2).

引用

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页码：939 / 941

页数：3

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