Improvement microwave dielectric properties of Zn2SnO4 ceramics by substituting Sn4+ with Si4+

被引:10
作者
Chen, Yih-Chien [1 ]
Su, Chien-Fang [1 ]
Weng, Min-Zhe [1 ]
You, Hong-Mine [1 ]
Chang, Kuang-Chiung [1 ]
机构
[1] Lunghwa Univ Sci & Technol, Dept Elect Engn, Gueishan Shiang, Taoyuan County, Taiwan
关键词
MG2SNO4; CERAMICS;
D O I
10.1007/s10854-014-1848-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The microwave dielectric properties of Zn-2(Sn(1-x)Six)O-4 ceramics were examined with a view to their exploitation for mobile communication. The Zn-2(Sn(1-x)Six)O-4 ceramics were prepared by the conventional solid-state method with various sintering temperatures. The X-ray diffraction patterns of the Zn-2(Sn(1-x)Six)O-4 ceramics revealed no significant variation of phase with sintering temperatures. A maximum density of 6.24 g/cm(3) was obtained for Zn-2(Sn0.93Si0.07)O-4 ceramic, sintered at 1,175 A degrees C for 4 h. Dielectric constant (E > (r) ) of 8.12, quality factor (Q x f) of 55,500 GHz, and temperature coefficient of resonant frequency (tau (f) ) of -119.3 ppm/A degrees C were obtained for Zn-2(Sn0.93Si0.07)O-4 ceramics that were sintered at 1,175 A degrees C for 4 h.
引用
收藏
页码:2120 / 2125
页数:6
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