Probing Photoexcited Carriers in a Few-Layer MoS2 Laminate by Time-Resolved Optical Pump-Terahertz Probe Spectroscopy

被引:92
作者
Kar, Srabani [1 ,2 ]
Su, Y. [3 ]
Nair, R. R. [3 ]
Sood, A. K. [1 ,2 ]
机构
[1] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India
[2] Indian Inst Sci, Ctr Ultrafast Laser Applicat, Bangalore 560012, Karnataka, India
[3] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England
关键词
few-layer MoS2; defect-assisted Auger scattering; bound excitons; optical pump-terahertz probe; MONO LAYER; EXCITON DYNAMICS; MONOLAYER MOS2; GRAPHENE; VALLEY; PHOTOLUMINESCENCE; ANNIHILATION; DEFECTS;
D O I
10.1021/acsnano.5b04804
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report the dynamics of photoinduced carriers in a free-standing MoS2 laminate consisting of a few layers (1-6 layers) using time-resolved optical pump-terahertz probe spectroscopy. Upon photoexcitation with the 800 nm pump pulse, the terahertz conductivity increases due to absorption by the photoinduced charge carriers. The relaxation of the non-equilibrium carriers shows fast as well as slow decay channels, analyzed using a rate equation model incorporating defect-assisted Auger scattering of photoexcited electrons, holes, and excitons. The fast relaxation time occurs due to the capture of electrons and holes by defects via Auger processes, resulting in nonradiative recombination. The slower relaxation arises since the excitons are bound to the defects, preventing the defect-assisted Auger recombination of the electrons and the holes. Our results provide a comprehensive understanding of the non-equilibrium carrier kinetics in a system of unscreened Coulomb interactions, where defect-assisted Auger processes dominate and should be applicable to other 2D systems.
引用
收藏
页码:12004 / 12010
页数:7
相关论文
共 55 条
[1]  
Agostini G., 2008, CHARACTERIZATION SEM, P200
[2]   Graphene-based liquid crystal device [J].
Blake, Peter ;
Brimicombe, Paul D. ;
Nair, Rahul R. ;
Booth, Tim J. ;
Jiang, Da ;
Schedin, Fred ;
Ponomarenko, Leonid A. ;
Morozov, Sergey V. ;
Gleeson, Helen F. ;
Hill, Ernie W. ;
Geim, Andre K. ;
Novoselov, Kostya S. .
NANO LETTERS, 2008, 8 (06) :1704-1708
[3]   Femtosecond carrier dynamics in bulk graphite and graphene paper [J].
Carbone, F. ;
Aubock, G. ;
Cannizzo, A. ;
Van Mourik, F. ;
Nair, R. R. ;
Geim, A. K. ;
Novoselov, K. S. ;
Chergui, M. .
CHEMICAL PHYSICS LETTERS, 2011, 504 (1-3) :37-40
[4]   Layer-dependent resonant Raman scattering of a few layer MoS2 [J].
Chakraborty, Biswanath ;
Matte, H. S. S. Ramakrishna ;
Sood, A. K. ;
Rao, C. N. R. .
JOURNAL OF RAMAN SPECTROSCOPY, 2013, 44 (01) :92-96
[5]   Ultrafast Transient Terahertz Conductivity of Mono layer MoS2 and WSe2 Grown by Chemical Vapor Deposition [J].
Docherty, Callum J. ;
Parkinson, Patrick ;
Joyce, Hannah J. ;
Chiu, Ming-Hui ;
Chen, Chang-Hsiao ;
Lee, Ming-Yang ;
Li, Lain-Jong ;
Herz, Laura M. ;
Johnston, Michael B. .
ACS NANO, 2014, 8 (11) :11147-11153
[6]   A reliable method for extraction of material parameters in terahertz time-domain spectroscopy [J].
Duvillaret, L ;
Garet, F ;
Coutaz, JL .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1996, 2 (03) :739-746
[7]  
Ehrenreich H., 1984, SOLID STATE PHYS, V38, P363
[8]   Studies of Intrinsic Hot Phonon Dynamics in Suspended Graphene by Transient Absorption Microscopy [J].
Gao, Bo ;
Hartland, Gregory ;
Fang, Tian ;
Kelly, Michelle ;
Jena, Debdeep ;
Xing, Huili ;
Huang, Libai .
NANO LETTERS, 2011, 11 (08) :3184-3189
[9]   Magnetoelectric effects and valley-controlled spin quantum gates in transition metal dichalcogenide bilayers [J].
Gong, Zhirui ;
Liu, Gui-Bin ;
Yu, Hongyi ;
Xiao, Di ;
Cui, Xiaodong ;
Xu, Xiaodong ;
Yao, Wang .
NATURE COMMUNICATIONS, 2013, 4
[10]  
Jiang T, 2014, NAT NANOTECHNOL, V9, P825, DOI [10.1038/nnano.2014.176, 10.1038/NNANO.2014.176]