Device Characteristics of CZTSSe Thin-Film Solar Cells with 12.6% Efficiency

被引：2940

作者：

Wang, Wei ^{[1
]}

Winkler, Mark T. ^{[1
]}

Gunawan, Oki ^{[1
]}

Gokmen, Tayfun ^{[1
]}

Todorov, Teodor K. ^{[1
]}

Zhu, Yu ^{[1
]}

Mitzi, David B. ^{[1
]}

机构：

[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

ADVANCED ENERGY MATERIALS | 2014年 / 4卷 / 07期

关键词：

DEFECTS;

D O I：

10.1002/aenm.201301465

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A 12.6% Cu2ZnSnSxSe4-x (CZTSSe) solar cell is presented with detailed device characteristics. Both short-circuit current density (Jsc) and open circuit voltage (Voc) increase in the 12.6% champion, relative to previous devices, due to better bulk CZTSSe quality and improved optical architecture. The reduction in Voc deficit shows opportunities to push CZTSSe solar cells to higher efficiency. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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页数：5

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