Consistent noise models for analysis and design of CMOS circuits

被引：29
作者：
Arnaud, A
Galup-Montoro, C
机构：
[1] Univ Republica, Fac Ingn, Microelect Grp, Montevideo, Uruguay
[2] Univ Fed Santa Catarina, Dept Elect Engn, Integrated Circuits Lab, BR-88040900 Florianopolis, SC, Brazil
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2004年 / 51卷 / 10期
关键词：
1/f noise; compact modeling; low-noise design; MOSFET; noise;
D O I：
10.1109/tcsi.2004.835028
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Simple, physics-based MOSFET noise models, valid over the linear, saturation, and subthreshold operation regions are presented. The consistency of the models representing series-parallel associations of transistors is verified. Simple formulas for hand analysis using the inversion level concept are developed. The proportionality between the flicker noise corner frequency and the transistor transition frequency is proved and experimentally verified under wide bias conditions. Application of the noise models to a low-noise design is shown.
引用
收藏
页码：1909 / 1915
页数：7
相关论文
共 19 条
[1]   Pico-A/V range CMOS transconductors using series-parallel current division [J].
Arnaud, A ;
Galup-Montoro, C .
ELECTRONICS LETTERS, 2003, 39 (18) :1295-1296
[2]   A compact model for flicker noise in MOS transistors for analog circuit design [J].
Arnaud, A ;
Galup-Montoro, C .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (08) :1815-1818
[3]  
ARNAUD A, 2003, P IEEE INT S CIRC SY, V1, P189
[4]  
CHANG HK, 1994, GENE THER, V1, P208
[5]   An MOS transistor model for analog circuit design [J].
Cunha, AIA ;
Schneider, MC ;
Galup-Montoro, C .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1998, 33 (10) :1510-1519
[6]  
ENZ C, 1996, EMERGING TECHNOLOGIE
[7]   AN ANALYTICAL MOS-TRANSISTOR MODEL VALID IN ALL REGIONS OF OPERATION AND DEDICATED TO LOW-VOLTAGE AND LOW-CURRENT APPLICATIONS [J].
ENZ, CC ;
KRUMMENACHER, F ;
VITTOZ, EA .
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 1995, 8 (01) :83-114
[8]   SERIES-PARALLEL ASSOCIATION OF FETS FOR HIGH-GAIN AND HIGH-FREQUENCY APPLICATIONS [J].
GALUPMONTORO, C ;
SCHNEIDER, MC ;
LOSS, IJB .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1994, 29 (09) :1094-1101
[9]  
Gray PR., 1984, ANAL DESIGN ANALOG I
[10]   A PHYSICS-BASED MOSFET NOISE MODEL FOR CIRCUIT SIMULATORS [J].
HUNG, KK ;
KO, PK ;
HU, C ;
CHENG, YC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (05) :1323-1333
12