Optical and microstructural studies of InGaN/GaN quantum dot ensembles

被引：5

作者：

Davies, S. C. ^{[1
]}

Mowbray, D. J. ^{[1
]}

Ranalli, F. ^{[2
]}

Parbrook, P. J. ^{[2
]}

Wang, Q. ^{[2
]}

Wang, T. ^{[2
]}

Yea, B. S. ^{[3
]}

Sherliker, B. J. ^{[3
]}

Halsall, M. P. ^{[3
]}

Kashtiban, R. J. ^{[4
]}

Bangert, U. ^{[4
]}

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[2] Univ Sheffield, EPSRC Natl Ctr Technol 3 5, Sheffield S1 3JD, S Yorkshire, England

[3] Univ Manchester, Sch Elect & Elect Engn, Photon Sci Inst, Manchester M13 9PL, Lancs, England

[4] Univ Manchester, Nanostructured Mat Res Grp, Sch Mat, Manchester M1 7HS, Lancs, England

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 11期

基金：

英国工程与自然科学研究理事会;

关键词：

WELL STRUCTURES; PHOTOLUMINESCENCE; EMISSION; EXCITON; SINGLE;

D O I：

10.1063/1.3226645

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An optical and structural study of InGaN/GaN quantum dots (QDs) is reported. With increasing InGaN deposition time, the dominant emission changes from wetting layer (WL) to QDs, and a strong redshift of the emission occurs. Emission from localized WL states is observed, with a density and nature very different to that due to the QDs. Structural measurements reveal a disordered WL, consistent with the form of the WL photoluminescence excitation spectra. (C) 2009 American Institute of Physics. [doi:10.1063/1.3226645]

引用

页数：3

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