Control of dot geometry and photoluminescence linewidth of InGaAs/GaAs quantum dots by growth conditions

被引：6
作者：
Gushterov, A. [1 ]
Lingys, L. [1 ]
Reithmaier, J. P. [1 ]
机构：
[1] Univ Kassel, Inst Nanostruct Technol & Anal INA, D-34132 Kassel, Germany
来源：
JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 07期
关键词：
Nanostructures; Molecular Beam Epitaxy; Quantum dots; Semiconducting gallium arsenide; Semiconducting III-V materials; LASERS; EMISSION;
D O I：
10.1016/j.jcrysgro.2008.10.067
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A study on the influence of the growth conditions on the optical and structural properties of In0.6Ga0.4As quantum dots (QDs) grown on GaAs(I 0 0) substrates is presented. We investigated the impact of the substrate temperature, the growth rate, and V/III flux ratio on the full-width of half-maximum (FWHM) of the photoluminescence (PL) spectra and on the density and height of quantum dots. Our results show that the dot density depends strongly on the growth parameters. From them the substrate temperature has the strongest influence on the density and the height of QDs as well as on the PL properties. By varying only this parameter a direct control of the dot density and the height is possible over more than one order of magnitude (from 6 x 10(10)cm(-2) at 480 degrees C to 1 x 10(8) cm(-2) at 530 degrees C). The smallest PL linewidth of 36 meV was observed by QDs deposited at low substrate temperatures (480 degrees C). (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：1783 / 1786
页数：4
相关论文
共 12 条
[1]   Highly efficient triggered emission of single photons by colloidal CdSe/ZnS nanocrystals [J].
Brokmann, X ;
Giacobino, E ;
Dahan, M ;
Hermier, JP .
APPLIED PHYSICS LETTERS, 2004, 85 (05) :712-714
[2]   High-power quantum dot lasers with improved temperature stability of emission wavelength for uncooled pump sources [J].
Deubert, S ;
Debusmann, R ;
Reithmaier, JP ;
Forchel, A .
ELECTRONICS LETTERS, 2005, 41 (20) :1125-1127
[3]   InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain [J].
Kovsh, AR ;
Maleev, NA ;
Zhukov, AE ;
Mikhrin, SS ;
Vasil'ev, AP ;
Semenova, EA ;
Shernyakov, YM ;
Maximov, MV ;
Livshits, DA ;
Ustinov, VM ;
Ledentsov, NN ;
Bimberg, D ;
Alferov, ZI .
JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) :729-736
[4]   MBE-grown metamorphic lasers for applications at telecom wavelengths [J].
Ledentsov, N. N. ;
Shchukin, V. A. ;
Kettler, T. ;
Posilovic, K. ;
Bimberg, D. ;
Karachinsky, L. Ya. ;
Gladyshev, A. Yu. ;
Maximov, M. V. ;
Novikov, I. I. ;
Shernyakov, Yu. M. ;
Zhukov, A. E. ;
Ustinov, V. M. ;
Kovsh, A. R. .
JOURNAL OF CRYSTAL GROWTH, 2007, 301 :914-922
[5]   InGaAs quantum dots grown on B-type high index GaAs substrates: surface morphologies and optical properties [J].
Liang, B. L. ;
Wang, Zh M. ;
Mazur, Yu I. ;
Strelchuck, V. V. ;
Holmes, K. ;
Lee, J. H. ;
Salamo, G. J. .
NANOTECHNOLOGY, 2006, 17 (11) :2736-2740
[6]   Systematic investigation into the influence of growth conditions on InAs/GaAs quantum dot properties [J].
Passow, T. ;
Li, S. ;
Feinaeugle, P. ;
Vallaitis, T. ;
Leuthold, J. ;
Litvinov, D. ;
Gerthsen, D. ;
Hetterich, M. .
JOURNAL OF APPLIED PHYSICS, 2007, 102 (07)
[7]   GaInAs/(Al)GaAs quantum-dot lasers with high wavelength stability [J].
Pavelescu, E-M ;
Gilfert, C. ;
Reithmaier, J. P. ;
Martin-Minguez, A. ;
Esquivias, I. .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (08) :085022
[8]   Photoreflectance determination of the wetting layer thickness in the InxGa1-xAs/GaAs quantum dot system for a broad indium content range of 0.3-1 [J].
Sek, G. ;
Poloczek, P. ;
Ryczko, K. ;
Misiewicz, J. ;
Loeffler, A. ;
Reithmaier, J. P. ;
Forchel, A. .
JOURNAL OF APPLIED PHYSICS, 2006, 100 (10)
[9]   EFFECTS OF MONOLAYER COVERAGE, FLUX RATIO, AND GROWTH-RATE ON THE ISLAND DENSITY OF INAS ISLANDS ON GAAS [J].
SOLOMON, GS ;
TREZZA, JA ;
HARRIS, JS .
APPLIED PHYSICS LETTERS, 1995, 66 (23) :3161-3163
[10]  
STEINER T, 2004, ATRECH HOUSE, P39
12