Sputtering phenomenon induced by laser-ablated particles

被引：1

作者：

Ohyanagi, T ^{[1
]}

Miyashita, A ^{[1
]}

Murakami, K ^{[1
]}

Yoda, O ^{[1
]}

机构：

[1] JAPAN ATOM ENERGY RES INST, TAKASAKI RADIAT CHEM RES ESTAB, TAKASAKI, GUMMA 37012, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1996年 / 35卷 / 6A期

关键词：

X-ray absorption spectroscopy; time-resolved measurement; laser ablation; sputtering; cluster;

D O I：

10.1143/JJAP.35.3436

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the dynamic behavior of laser-ablated Si particles by means of time-resolved X-ray absorption spectroscopy. Laser-ablated Si particles are found to induce sputtering of an Al plate which is located near the Si target. Moreover, it is suggested that Si cluster formation is enhanced by collisions between laser-ablated Si particles and Si particles backscattered by a Si wafer located near the Si target. We tentatively assign unidentified X-ray absorption peaks appearing near 120 eV to small Si clusters.

引用

页码：3436 / 3439

页数：4

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