The Hartman effect in monolayer graphene with Rashba spin-orbit interaction

被引：9
|
作者：
Hasanirokh, Kobra [1 ]
Mohammadpour, Hakimeh [1 ]
Esmaelpour, Mohammad [1 ]
Phirouznia, Arash [1 ]
机构：
[1] Azarbaijan Shahid Madani Univ, Dept Phys, Tabriz 53714161, Iran
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2015年 / 74卷
关键词：
Hartman effect; Graphene; Rashba effect; Magnetic tunnel Junction;
D O I：
10.1016/j.physe.2015.05.023
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this paper, the Hartman effect is investigated in electron tunneling through a barrier on the graphene channel in the presence of Rashba spin orbit interaction (RSOI). Two cases of normal and ferromagnetic channel are considered. The calculated results indicate that the occurrence of the Hartman effect in tunneling process depends strongly on Rashba SOI parameter, incidence angle, energy of the carriers and the ferromagnetic exchange energy of the leads. (C) 2015 Elsevier B.V. All rights reserved
引用
收藏
页码：30 / 33
页数：4
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