Influence of the amorphous/crystalline phase of Zr1-xAlxO2 high-k layers on the capacitance performance of metal insulator metal stacks

被引：24

作者：

Paskaleva, Albena ^{[1
]}

Lemberger, Martin ^{[2
]}

Bauer, Anton J. ^{[2
]}

Weinreich, Wenke ^{[3
]}

Heitmann, Johannes ^{[4
]}

Erben, Elke ^{[4
]}

Schroeder, Uwe ^{[4
]}

Oberbeck, Lars ^{[4
]}

机构：

[1] Bulgarian Acad Sci, Inst Solid State Phys, Sofia 1784, Bulgaria

[2] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany

[3] Fraunhofer Ctr Nanoelect Technol, D-01099 Dresden, Germany

[4] Qimonda Dresden GmbH & Co OHG, D-01099 Dresden, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 05期

关键词：

dielectric relaxation; grain boundaries; high-k dielectric thin films; MIM structures; titanium compounds; zirconium compounds; MIM CAPACITORS; ELECTRICAL CHARACTERIZATION; FILMS; HFO2; IMPROVEMENT; INTERFACE;

D O I：

10.1063/1.3204666

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The capacitance behavior of metal insulator metal (MIM) structures with Zr1-xAlxO2 dielectrics and TiN metal electrodes is analyzed. The capacitance nonlinearity, the dielectric relaxation, and the loss phenomena are found to depend strongly on the Al content, the dielectric thickness, and the amorphous/crystalline phase of the dielectric layer. Two different kinds of phenomena-crystallization-related and interface-related, are considered to explain the observed results, especially the polarity asymmetry in the dielectric behavior. It is found that crystallization of the films enhances the effects of dielectric relaxation and loss, most likely due to charge trapping at grain boundaries. Further on, reactions between the oxidizing ambient (ozone) and the bottom electrode during high-k deposition result in structural changes (formation of TiOx interfacial layer) and thus in generation of defects which cause a different electrical behavior of the two TiN/Zr1-xAlxO2 interfaces at the top and the bottom electrode and a polarity asymmetry of the capacitance performance.

引用

页数：6

共 26 条

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