The structure and properties of Mn3O4 thin films grown by MOCVD

被引：72

作者：

Gorbenko, OY ^{[1
]}

Graboy, IE

Amelichev, VA

Bosak, AA

Kaul, AR

Güttler, B

Svetchnikov, VL

Zandbergen, HW

机构：

[1] Moscow MV Lomonosov State Univ, Dept Chem, Moscow 119899, Russia

[2] PTB, D-38116 Braunschweig, Germany

[3] Delft Univ Technol, Natl Ctr HREM, NL-2628 AL Delft, Netherlands

来源：

SOLID STATE COMMUNICATIONS | 2002年 / 124卷 / 1-2期

基金：

俄罗斯基础研究基金会;

关键词：

thin films; epitaxy; scanning and transmission electron microscopy; phase transitions;

D O I：

10.1016/S0038-1098(02)00470-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The results of the simultaneous deposition of Mn3O4 films 100 nm thick at 750 degreesC and P(O-2) = 1 mbar by MOCVD on three different single crystal substrates (MgO, LaAlO3 and SrTiO3) are considered. Using X-ray diffraction, Raman spectrometry, high-resolution transmission electron microscopy and magnetic measurements we have demonstrated that the films grown on MgO differ greatly from the stable tetragonal bulk form of Mn3O4 (hausmannite) and are very similar to the high-temperature cubic form with the suppressed Jahn-Teller distortion in manganese-oxygen octahedra. The hausmannite films of the mixed orientations were grown on perovskite substrates. The experimental results are discussed in the framework of the epitaxial stabilization model. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：15 / 20

页数：6

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