The study of flexible emission and photoconductivity in 2D layered InSe toward an applicable 1000-nm light emitter and absorber

Multilayer InSe with a thickness above similar to 20 nm is a direct semiconductor proposed for solar-energy conversion and to use in flexible optoelectronics. We demonstrate herein a superior 1000-nm light emission and absorption capability of two-dimensional (2D) multilayer InSe studied by photoluminescence (PL) and photoconductivity (PC) experiments. Layered crystals of InSe have been grown by chemical vapor transport method using ICl3 as a transport agent. Polarized Raman measurement confirmed 2 H epsilon crystalline phase of the as-grown crystals. For 2D flexible applications, the bending photoluminescence (BPL) result of InSe (t approximate to 30 nm) showed an enhancement in light intensity with respect to that of the flat PL condition. It might be because the cylinder surface area under bending (convex) is larger than that of the flat surface under the same laser excitation condition. Besides, the luminescence efficiency of BPL is also enhanced owing to the widening of emission solid angle of each Se-In-In-Se unit in the InSe as compared to that of the flat PL condition. The emission wavelength is about 1000 nm at room temperature. Furthermore, for the PC study, photoresponsivity spectrum of a Ag-InSe-Ag multilayer photoconductor demonstrates a prominent peak absorption at 1.1 similar to 1.3 eV, matching well with the direct-free-exciton energy of the multilayer InSe. All the experimental results demonstrate that 2D multilayer InSe is a promising 1000 nm light emitter and absorber available for potential optoelectronics applications.