Breakdown voltage in uniaxially strained n-channel SOI MOSFET

被引：9

作者：

Watanabe, N ^{[1
]}

Kojima, T ^{[1
]}

Maeda, Y ^{[1
]}

Nishisaka, M ^{[1
]}

Asano, T ^{[1
]}

机构：

[1] Kyushu Inst Technol, Ctr Microelect Syst, Iizuka, Fukuoka 8208502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 4B期

关键词：

strained Si; SOI; MOSFET; floating-body effect; strain effect; impact ionization; cantilever; drain breakdown voltage;

D O I：

10.1143/JJAP.43.2134

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The drain breakdown voltage of n-channel silicon-on-insulator (SOI) metal oxide semiconductor field-effect transistors (MOSFETs) was found to decrease with the application of uniaxial tensile strain along the channel. The decrease in drain breakdown voltage was found to depend on the direction of the strain applied with respect to the current flow. To investigate the mechanism of this phenomenon, the influence of uniaxial tensile strain on built-in potential at the source junction and on impact ionization was investigated using an SOI lateral diode and bulk MOSFET. Uniaxial strain was induced by mechanically applying bending deformation to the chip using a cantilever structure. Built-in potential at the source junction remained unchanged. Impact ionization rate at the drain edge of MOSFET was found to increase with increasing uniaxial tensile strain. This increase in impact ionization rate is shown to be the cause of the reduced drain breakdown of SOI MOSFET in the presence of uniaxial strain.

引用

页码：2134 / 2139

页数：6

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