The effect of Eu2+ doping concentration on luminescence properties of BaAl2Si2O8:Eu2+ blue phosphor

The BaAl2Si2O8:Eu2+ blue phosphor was synthesized by one-step calcination of the precursor prepared by chemical coprecipitation. X-ray diffraction and fluorescence spectrophotometry were used to investigate the structural and luminescent properties of the BaAl2Si2O8:Eu2+ blue phosphor. The result showed the BaAl2Si2O8:Eu2+ synthesized by the process was pure. The excitation spectrum of the BaAl2Si2O8:Eu2+ blue phosphor extended from 240 to 410 nm, and the peak appeared around 320 nm, thus the phosphor can be excited effectively by InGaN chip in the range of 350-410 nm. The emission spectrum excited by 365 nm showed a characteristic wide band with the peak at about 465 nm. The emission spectrum intensity firstly increased with Eu2+ doping concentration increasing,then decreased. The strongest emission intensity was obtained when Eu2+ doping concentration reached 3.5mol%. The concentration quenching mechanism was caused by the exchange interaction of Eu2+ ions according to the Dexter theory.