Flip-chip bonded hybrid CMOS/SEED optoelectronic smart pixels

被引:16
作者
Chen, HD [1 ]
Liang, K
Zeng, QM
Li, XJ
Chen, ZB
Du, Y
Wu, RH
机构
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
[2] Hebei Semicond Res Inst, Shijiazhuang 050051, Peoples R China
来源
IEE PROCEEDINGS-OPTOELECTRONICS | 2000年 / 147卷 / 01期
关键词
D O I
10.1049/ip-opt:20000380
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.
引用
收藏
页码:2 / 6
页数:5
相关论文
共 10 条
[1]   BATCH FABRICATION AND OPERATION OF GAAS-A1XGA1-XAS FIELD-EFFECT TRANSISTOR-SELF-ELECTROOPTIC EFFECT DEVICE (FET-SEED) SMART PIXEL ARRAYS [J].
DASARO, LA ;
CHIROVSKY, LMF ;
LASKOWSKI, EJ ;
PEI, SS ;
WOODWARD, TK ;
LENTINE, AL ;
LEIBENGUTH, RE ;
FOCHT, MW ;
FREUND, JM ;
GUTH, GG ;
SMITH, LE .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (02) :670-677
[2]   GAAS MQW MODULATORS INTEGRATED WITH SILICON CMOS [J].
GOOSSEN, KW ;
WALKER, JA ;
DASARO, LA ;
HUI, SP ;
TSENG, B ;
LEIBENGUTH, R ;
KOSSIVES, D ;
BACON, DD ;
DAHRINGER, D ;
CHIROVSKY, LMF ;
LENTINE, AL ;
MILLER, DAB .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (04) :360-362
[3]   Progress in the smart pixel technologies [J].
Hinton, HS .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1996, 2 (01) :14-23
[4]  
Krishnamoorthy AV, 1997, INT J OPTOELECTRON, V11, P181
[5]   3-D INTEGRATION OF MQW MODULATORS OVER ACTIVE SUBMICRON CMOS CIRCUITS - 375 MB/S TRANSIMPEDANCE RECEIVER TRANSMITTER CIRCUIT [J].
KRISHNAMOORTHY, AV ;
LENTINE, AL ;
GOOSSEN, KW ;
WALKER, JA ;
WOODWARD, TK ;
FORD, JE ;
APLIN, GF ;
DASARO, LA ;
HUI, SP ;
TSENG, B ;
LEIBENGUTH, R ;
KOSSIVES, D ;
DAHRINGER, D ;
CHIROVSKY, LMF ;
MILLER, DAB .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (11) :1288-1290
[6]   Scaling optoelectronic-VLSI circuits into the 21st century: A technology roadmap [J].
Krishnamoorthy, AV ;
Miller, DAB .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1996, 2 (01) :55-76
[7]   Asynchronous transfer mode distribution network by use of an optoelectronic VLSI switching chip [J].
Lentine, AL ;
Reiley, DJ ;
Novotny, RA ;
Morrison, RL ;
Sasian, JM ;
Beckman, MG ;
Buchholz, DB ;
Hinterlong, SJ ;
Cloonan, TJ ;
Richards, GW ;
McCormick, FB .
APPLIED OPTICS, 1997, 36 (08) :1804-1814
[8]   NOVEL HYBRID OPTICALLY BISTABLE SWITCH - THE QUANTUM WELL SELF-ELECTRO-OPTIC EFFECT DEVICE [J].
MILLER, DAB ;
CHEMLA, DS ;
DAMEN, TC ;
GOSSARD, AC ;
WIEGMANN, W ;
WOOD, TH ;
BURRUS, CA .
APPLIED PHYSICS LETTERS, 1984, 45 (01) :13-15
[9]  
MILLER DAB, 1989, IEEE PHOTONIC TECH L, V21, P61
[10]   The mode control of asymmetric Fabry-Perot optical modulators with multiple quantum wells [J].
Wu, RH ;
Chen, ZB ;
Chen, HD ;
Gao, WZ ;
Zhao, J .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (11) :2071-2075