Monolithic Multiband MEMS RF Front-End Module for 5G Mobile

被引：24

作者：

Campanella, Humberto ^{[1
,2
]}

Qian, You ^{[1
,2
]}

Romero, Christian O. ^{[1
,3
]}

Wong, Jen Shuang ^{[1
]}

Giner, Joan ^{[1
,4
]}

Kumar, Rakesh ^{[1
,2
]}

机构：

[1] GLOBALFOUNDRIES, Singapore 738406, Singapore

[2] Skyworks Solut, Singapore 469269, Singapore

[3] Semtech Corp, CH-2000 Neuchatel, Switzerland

[4] Bosch Sensortec, D-72770 Reutlingen, Germany

来源：

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS | 2021年 / 30卷 / 01期

关键词：

Micromechanical devices; Radio frequency; 5G mobile communication; Resonators; Radiofrequency integrated circuits; Silicon; III-V semiconductor materials; Film bulk acoustic resonators; Lamb acoustic wave devices; bulk acoustic wave (BAW) filters; MEMS filters; RF silicon-on-insulator (RF-SOI); RF front-end modules (RF-FEM); Fifth Generation of Mobile Communications (5G); OSCILLATOR;

D O I：

10.1109/JMEMS.2020.3036379

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work reports a monolithic RF front-end module integrating bulk acoustic wave (BAW) filters, Lamb acoustic wave filters, and electronic RF silicon-on-insulator (RFSOI) switches to deliver single-chip multiband RF front-end module (RF-FEM) manufactured on commercial 200mm RF silicon-on-insulator (RFSOI) foundry technology. BAW and Lamb filters built in the same chip and within the same process enable multiband operation. Vertical System-on-Chip (SoC) integration of MEMS and RFSOI components contributes to footprint reduction up to 50%, compared to system-in-package (SiP) modules, and reduces the integration and design complexity of the modules. At its current state of development, this technology is suitable for diversity receive modules (DRX) for 4G/LTE and 5G bands. Extensive characterization results and case studies demonstrate the robustness of the integrated platform. Further productization of this technology will enable the next generation of hundred-filter 5G sub-6GHz RF-FEMs. [2020-0304]

引用

页码：72 / 80

页数：9

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