Electrostatic Discharge Effects in Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques

被引：0

作者：

Griffoni, Alessio ^{[1
]}

Tazzoli, Augusto ^{[1
]}

Gerardin, Simone ^{[1
]}

Simoen, Eddy ^{[2
]}

Claeys, Cor ^{[2
,3
]}

Meneghesso, Gaudenzio ^{[1
]}

机构：

[1] Univ Padua, Dept Informat Engn, Via Gradenigo 6B, I-35131 Padua, Italy

[2] IMEC, B-3001 Leuven, Belgium

[3] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Leuven, Belgium

来源：

ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS - 2008 | 2008年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The ESD sensitivity of 65-nm Fully Depleted SOI MOSFETs (with thin silicon body) used as output buffer devices is studied. A detailed electrical investigation is carried out in order to classify the observed failure modes and :mechanisms. We propose a new failure criterion that allows us to univocally identify the device failure. Finally, we analyze the impact of device geometry and strain engineering on the ESD sensitivity.

引用

页码：59 / +

页数：2

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