Silicon Nanowires based Solar Cell Using Native Oxide and Silicon Nitride Bi-Layer Passivation

被引：0

作者：

Lin, Xingxing ^{[1
]}

机构：

[1] Shanghai Dian Ji Univ, Dept Math & Phys, Shanghai 201306, Peoples R China

来源：

MATERIALS SCIENCE, MACHINERY AND ENERGY ENGINEERING | 2014年 / 853卷

关键词：

Silicon nanowires; Solar cell; Native oxide; SiNx; Passivation; PHOTOVOLTAIC APPLICATIONS; ARRAYS;

D O I：

10.4028/www.scientific.net/AMR.853.341

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon nanowires (SiNWs) based solar cells are passivated by native oxide and SiNx hi-layer. In comparison with cells passivated by SiNx single layer, bi-layer passivation exhibits higher effective minority lifetime, illustrating a better surface passivation effect, which leads to a gain of internal quantum efficiency in the short wavelength range, a better output performance with an increase of 0.16% in efficiency. The data obtained from this work is fundamental and has some reference value for future studies.

引用

页码：341 / 344

页数：4

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