共 49 条
Influence of thiourea in the precursor solution on the structural, optical and electrical properties of CZTS thin films deposited via spray coating technique
被引:6
作者:

Prabeesh, P.
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Govt India, Minist Elect & Informat Technol, Ctr Mat Elect Technol C MET, Sci Soc, Shoranur Rd,Athani PO, Trichur 680581, India Govt India, Minist Elect & Informat Technol, Ctr Mat Elect Technol C MET, Sci Soc, Shoranur Rd,Athani PO, Trichur 680581, India

Sajeesh, V. G.
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Govt India, Minist Elect & Informat Technol, Ctr Mat Elect Technol C MET, Sci Soc, Shoranur Rd,Athani PO, Trichur 680581, India Govt India, Minist Elect & Informat Technol, Ctr Mat Elect Technol C MET, Sci Soc, Shoranur Rd,Athani PO, Trichur 680581, India

Selvam, I. Packia
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Govt India, Minist Elect & Informat Technol, Ctr Mat Elect Technol C MET, Sci Soc, Shoranur Rd,Athani PO, Trichur 680581, India Govt India, Minist Elect & Informat Technol, Ctr Mat Elect Technol C MET, Sci Soc, Shoranur Rd,Athani PO, Trichur 680581, India

Potty, S. N.
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Govt India, Minist Elect & Informat Technol, Ctr Mat Elect Technol C MET, Sci Soc, Shoranur Rd,Athani PO, Trichur 680581, India Govt India, Minist Elect & Informat Technol, Ctr Mat Elect Technol C MET, Sci Soc, Shoranur Rd,Athani PO, Trichur 680581, India
机构:
[1] Govt India, Minist Elect & Informat Technol, Ctr Mat Elect Technol C MET, Sci Soc, Shoranur Rd,Athani PO, Trichur 680581, India
关键词:
SOLAR-CELL;
SULFURIZATION TEMPERATURE;
CU2ZNSNS4;
FABRICATION;
D O I:
10.1007/s10854-020-05156-y
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
CZTS films were prepared by spray coating using non-aqueous precursor solutions with and without sulphur source and studied their structural, optical and electrical properties. The films prepared by both the routes were sulphurized at different temperatures to study the effect of temperature on the phase formation. Phase purity was confirmed by XRD, Raman analysis and Rietveld refinement technique. The studies revealed proper phase and crystallinity for the films of both routes sulphurized at 550 degrees C. These films exhibited dense and improved grain structure, optimal bandgap and higher absorption coefficient. The non-thiourea films sulphurized at 550 degrees C had a carrier concentration of 1.544 x 10(19) cm(-3), mobility of 0.87 cm(2)V(-1) s(-1) and resistivity of 0.46 Omega.cm, while the thiourea films achieved carrier concentration, mobility and resistivity of 3.67 x 10(19) cm(-3), 0.33 cm(2)V(-1) s(-1) and 0.52 Omega.cm, respectively. The comparative study demonstrates that the films under investigation have the potential for the fabrication of efficient solar cells.
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页码:4146 / 4156
页数:11
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