Synthesis and properties of films in the SiO2-Bi2O3 system

被引：5

作者：

Borilo, L. P. ^{[1
]}

Mal'chik, A. G. ^{[2
]}

Kuznetsova, S. A. ^{[1
]}

Kozik, V. V. ^{[1
,2
]}

Zabolotskaya, A. V. ^{[1
]}

机构：

[1] Natl Res Tomsk State Univ, Tomsk 634050, Russia

[2] Tomsk Polytech Univ, Yurga Inst Technol, Yurga 652055, Kemerovo Oblast, Russia

来源：

RUSSIAN JOURNAL OF INORGANIC CHEMISTRY | 2014年 / 59卷 / 10期

关键词：

COMPOSITE FILMS; OXIDES;

D O I：

10.1134/S0036023614100039

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

The compositions of film-forming solutions for synthesizing films in the SiO2-Bi2O3 system were determined (10-90 mol % Bi2O3). The obtained films are characterized by high dielectric constants (2.43-7.89). It was demonstrated how the quantitative ratio between SiO2 and Bi2O3 in the films and powders affects their phase composition, refractive index, and dielectric constant and the acid-base properties of the surface.

引用

页码：1065 / 1068

页数：4

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